?2007 fairchild semiconductor corporation 1 www.fairchildsemi.com FDD3N40 / fdu3n40 rev.c2 FDD3N40 / fdu3n40 n-channel unifet tm mosfet march 2013 FDD3N40 / fdu3n40 n-channel unifet tm mosfet 400 v, 2 a, 3.4 ? features ?r ds(on) = 3.4 ? ( max.) @ v gs = 10 v, i d = 1 a ? low gate charge ( typ. 4.5 nc) ?low c rss ( typ. 3.7 pf) ? 100% avalanche testes applications ?led tv ? consumer appliances ? lighting ? uninterruptible power supply absolute maximum ratings description unifet tm mosfet is fairchild semiconductor ? ?s high voltage mosfet family based on planar stripe and dmos technology. this mosfet is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. this device fami ly is suitable for switching power converter applications such as power factor correction (pfc), flat panel display (fpd) tv power, atx and electronic lamp ballasts. ? d g s s d g s d g d-pak i-pak symbol parameter FDD3N40 / fdu3n40 unit v dss drain-source voltage 400 v i d drain current - continuous (t c = 25 ? c) - continuous (t c = 100 ? c) 2.0 1.25 a a i dm drain current - pulsed (note 1) 8.0 a v gss gate-source voltage ?30 v e as single pulsed avalanche energy (note 2) 46 mj i ar avalanche current (note 1) 2 a e ar repetitive avalanche energy (note 1) 3 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 ? c) - derate above 25 ? c 30 0.24 w w/ ? c t j, t stg operating and storage temperature range -55 to +150 ? c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 ? c symbol parameter FDD3N40 / fdu3n40 unit r ? jc thermal resistance, junction-to-case, max. 4.2 ? c/ w r ? ja thermal resistance, junction to ambient, max. 110 ? c/ w thermal characteristics
?2007 fairchild semiconductor corporation 2 www.fairchildsemi.com FDD3N40 / fdu3n40 rev.c2 FDD3N40 / fdu3n40 n-channel unifet tm mosfet package marking and ordering information device marking device package reel size tape width quantity FDD3N40 FDD3N40tm d-pak 380mm 16mm 2500 fdu3n40 fdu3n40tu i-pak - - 70 electrical characteristics t c = 25c unless otherwise noted symbol parameter conditions min. typ. max unit off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 ? a 400 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 ? a, referenced to 25 ? c -- 0.4 -- v/ ? c i dss zero gate voltage drain current v ds = 400v, v gs = 0v v ds = 320v, t c = 125 ? c -- -- -- -- 1 10 ? a ? a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 ? a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 1a -- 2.8 3.4 ? g fs forward transconductance v ds = 40v, i d = 1a -- 2 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 173 225 pf c oss output capacitance -- 30 40 pf c rss reverse transfer capacitance -- 3.7 6 pf switching characteristics t d(on) turn-on delay time v dd = 200v, i d = 3a r g = 25 ? (note 4) -- 10 30 ns t r turn-on rise time -- 30 70 ns t d(off) turn-off delay time -- 10 30 ns t f turn-off fall time -- 25 60 ns q g total gate charge v ds = 320v, i d = 3a v gs = 10v (note 4) -- 4.5 6 nc q gs gate-source charge -- 1.2 -- nc q gd gate-drain charge -- 2 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 2 a i sm maximum pulsed drain-source diode forward current -- -- 8 a v sd drain-source diode forward voltage v gs = 0v, i s = 2a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 3a di f /dt =100a/ ? s -- 210 -- ns q rr reverse recovery charge -- 0.75 -- ? c notes: 1. repetitive rating: pulse width limit e d by maximum junction temperature 2. l = 20mh, i as = 2a, v dd = 50v, r g = 25 ? , starting t j = 25 ?c 3. i sd ? 2a, di/dt ? 200a/ ? s, v dd ? bv dss , starting t j = 25 ?c 4. essentially independent of operating temperature typical characteristics
?2007 fairchild semiconductor corporation 3 www.fairchildsemi.com FDD3N40 / fdu3n40 rev.c2 FDD3N40 / fdu3n40 n-channel unifet tm mosfet typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariation vs. s ource current and temperatue figure 5. capacitance characteristics figure 6. gate charge characteristics 45678910 10 0 10 1 150 o c 25 o c -55 o c * notes : 1. v ds = 40v 2. 250 p s pulse test i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v * notes : 1. 250 p s pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 0123456 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 v gs = 20v v gs = 10v * note : t j = 25 o c r ds(on) [ : ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 -1 10 0 10 1 150 o c * notes : 1. v gs = 0v 2. 250 p s pulse test 25 o c i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 50 100 150 200 250 300 350 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 012345 0 2 4 6 8 10 12 v ds = 200v v ds = 80v v ds = 320v * note : i d = 3a v gs , gate-source voltage [v] q g , total gate charge [nc]
?2007 fairchild semiconductor corporation 4 www.fairchildsemi.com FDD3N40 / fdu3n40 rev.c2 FDD3N40 / fdu3n40 n-channel unifet tm mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 1 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0 v 2. i d = 250 p a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 100 ms 1 ms 10 p s dc 10 ms 100 p s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 i d , drain current [a] t c , case temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 0 * n otes : 1. z t jc (t) = 4.2 o c/w max. 2. d uty f actor, d =t 1 /t 2 3. t jm - t c = p dm * z t jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2
?2007 fairchild semiconductor corporation 5 www.fairchildsemi.com FDD3N40 / fdu3n40 rev.c2 FDD3N40 / fdu3n40 n-channel unifet tm mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
?2007 fairchild semiconductor corporation 6 www.fairchildsemi.com FDD3N40 / fdu3n40 rev.c2 FDD3N40 / fdu3n40 n-channel unifet tm mosfet peak diode recovery dv/dt test circuit & waveforms
?2007 fairchild semiconductor corporation 7 www.fairchildsemi.com FDD3N40 / fdu3n40 rev.c2 FDD3N40 / fdu3n40 n-channel unifet tm mosfet dimensions in millimeters mechanical dimensions d-pak dimensions in millimeters
?2007 fairchild semiconductor corporation 8 www.fairchildsemi.com FDD3N40 / fdu3n40 rev.c2 FDD3N40 / fdu3n40 n-channel unifet tm mosfet mechanical dimensions i-pak dimensions in millimeters
?2007 fairchild semiconductor corporation 9 www.fairchildsemi.com FDD3N40 / fdu3n40 rev.c2 FDD3N40 / fdu3n40 n-channel unifet tm mosfet trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform w hen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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